*simulator lang = spice
.MODEL PTFT_P3HT_TG PMOS( LEVEL=61

**removing temperature dependence**
+tnom=27
+kvt = 0
+kasat = 0

**process***
+VTO=-0.109375	$zero-bias threshold
+TOX=100e-9 	$dielectric thickness
+cgso = 2.5e-8    cgdo = 2.5e-8

**physics****
+EPS=1.5	$channel dielectric constant
+EPSI=9578.125	$insulator dielectric constant
+MUBAND=2e-4	$band mobility in m2/VS
**---leakage---****
+sigma0=1.15478198468946e-09 	$minimum leakage 
+IOL=2.4582440689202e-10	$zero-bias leakage
*===working=====
+lambda=0.001	$output conductance
+vaa=2.828125		$characteristic voltage for field effect mobility
+GAMMA=0.859375	$power law mobility parameter
+def0=0.6	$dark fermi level
+rd=0 rs=0	$drain/source resistance
+alphasat=0.5078125	$satuation modulation parameter	$cannot be 0?
+delta=0.015625	$transition width parameter
*=====================
+VFB=0.015625		$flatband voltage
+VGSL=6.046875		$VGS leakage dependency	$cannot be 0?

)

